v ds (v) r ds(on) ( ) i d (a) a 50 0.018 @ v gs = 10 v 30 50 0.020 @ v gs = 4.5 v 30 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD45N05-20L
parameter symbol limit unit drain-source voltage v ds 50 v gate-source voltage v gs 20 v continuous drain current a t c = 25 c i d 30 a continuous drain current a t c = 100 c i d 30 a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 43 avalanche current i ar 37 repetitive avalanche energy (duty cycle 1%) l = 0.1 mh e ar 93 mj maximum power dissipation t c = 25 c p d 75 w maximum power dissipation t a = 25 c p d 2.5 a w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol limit unit maximum junction - to - ambient free air, fr4 board mount r thja 60 c/w m ax i mum j unc ti on- t o- a m bi en t free air, vertical mount r thja 110 c/w maximum junction-to-case r thjc 2.0 notes a. package limited. b. surface mounted on fr4 board, t 10 sec. SUD45N05-20L n-channel 50 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 5
parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 50 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 50 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 50 v, v gs = 0 v, t j = 125 c 50 a v ds = 50 v, v gs = 0 v, t j = 175 c 150 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 43 a dis os r i b v gs = 10 v, i d = 20 a 0.018 drain - source on - state resistance b r ds(on) v gs = 10 v, i d = 20 a, t j = 125 c 0.036 drain - source on - state resistance b r ds(on) v gs = 10 v, i d = 43 a, t j = 125 c 0.040 v gs = 4.5 v, i d = 43 a 0.020 forward transconductance b g fs v ds = 15 v, i d = 43 a 20 s dynamic a input capacitance c iss 1800 3600 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 370 pf reverse transfer capacitance c rss 130 total gate charge c q g v25vv10vi43a 43 60 c gate-source charge c q gs v ds = 25 v, v gs = 10 v, i d = 43 a 7 nc gate-drain charge c q gd 10 turn-on delay time c t d(on) v25vr06 10 20 rise time c t r v dd = 25 v, r l = 0.6 i 43a v 10v r 25 10 20 ns turn-off delay time c t d(off) dd , l i d 43 a, v gen = 10 v, r g = 2.5 32 60 ns fall time c t f 7 15 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 43 a diode forward voltage b v sd i f = 43 a, v gs = 0 v 1.5 v source-drain reverse recovery time t rr i f = 43 a, di/dt = 100 a/ s 49 100 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. www.freescale.net.cn 2 / 5 SUD45N05-20L n-channel 50 v (d-s) 175 c mosfet
0 20 40 60 80 0 102030405060 0 500 1000 1500 2000 2500 3000 0 1020304050 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) w ) v gs transconductance (s) g fs 0 20 40 60 80 100 0246810 0 2 4 6 8 10 0 1020304050 0 0.01 0.02 0.03 0.04 0 204060 0 10 20 30 40 50 60 012345 25 c 55 c 5 v t c = 125 c v ds = 25 v i d = 43 a v gs = 10, 9, 8, 7, 6 v v gs = 10 v v gs = 4.5 v c rss t c = 55 c 25 c 125 c 3 v 4 v c oss c iss i d drain current (a) www.freescale.net.cn 3 / 5 SUD45N05-20L n-channel 50 v (d-s) 175 c mosfet
on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) w ) source current (a) i s 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 50 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 20 a t j = 25 c t j = 150 c 0
safe operating area v ds drain-to-source voltage (v) drain current (a) i d 200 10 0.1 0.1 1 10 100 limited by r ds(on) 1 100 t c = 25 c single pulse 1 ms 10 ms 100 ms dc, 1 s 100 s normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 110 normalized effective transient thermal impedance maximum drain current vs. casetemperature t c case temperature ( c) drain current (a) i d 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0.2 0.1 duty cycle = 0.5 30 0.02 0.05 single pulse www.freescale.net.cn 4 / 5 SUD45N05-20L n-channel 50 v (d-s) 175 c mosfet
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